SK hynix has started shipping samples of its 12-layer HBM4E memory to customers. The new stack reaches 48GB capacity, delivers data transfer speeds of up to 16Gbps per pin, and improves power efficiency by more than 20% compared to earlier products.
The memory relies on SK hynix’s Advanced MR-MUF packaging technology. The process places protective material between stacked memory dies, allowing the company to increase capacity while maintaining package stability across a 12-layer structure.
Capacity reaches 48GB in a single stack, making it the highest-capacity HBM product announced by SK hynix to date. Larger memory stacks have become increasingly important as accelerator manufacturers continue increasing memory requirements for AI training and inference hardware.
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Power efficiency improves by more than 20% compared to previous products. Alongside the efficiency gains, SK hynix reports a 17% improvement in heat resistance compared to HBM4.
Thermal management has become a critical consideration for advanced accelerators as memory bandwidth, power density, and compute performance continue increasing with each hardware generation. Higher thermal tolerance can help maintain stability during sustained workloads in datacenter environments.
The new memory follows SK hynix’s earlier HBM3, HBM3E, and HBM4 products. The company remains one of the primary suppliers of high-bandwidth memory for AI accelerators and high-performance computing hardware.
Customer validation is currently underway as partners evaluate the new memory ahead of future deployment. The sampling phase allows hardware manufacturers to test compatibility, performance, and reliability before mass production begins.
SK hynix stated that it will continue working with customers as qualification and validation efforts progress. The company expects the new memory to play a role in future AI infrastructure, where memory capacity, bandwidth, power consumption, and thermal performance continue to influence overall accelerator design.
The shipment of customer samples marks the next step toward commercial deployment of HBM4E. With 48GB capacity, 16Gbps per-pin speeds, higher efficiency, and improved thermal characteristics, the new memory represents SK hynix’s latest advancement in the high-bandwidth memory segment.
Source: SK hynix
